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IRF6628TRPBF

Part No IRF6628TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 27A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 27A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 3770pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 131269-IRF6628TRPBF
Family Name IRF6628
Introduction Date April 02, 2009
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF6628TRPBF CAD Model

Description

The supply and demand status is limited.

  • Application: The product is a MOSFET transistor that is designed for use in automotive and power management applications.
  • Maximum Power Dissipation: 2.8W
  • Drain-Source Breakdown Voltage: 30V
  • Package: The product has a unique DirectFET Isometric MX package
  • Maximum Rds On at Id,Vgs: 2.5 mOhm @ 27A, 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7115 $60.4775
200+ $0.5833 $116.6600
310+ $0.5660 $175.4600
425+ $0.5475 $232.6875
550+ $0.5290 $290.9500
730+ $0.4747 $346.5310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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Shipping Information

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