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Same model may have multiple batches, images only for reference.
IRF6691TRPBF
Same model may have multiple batches, images only for reference.

IRF6691TRPBF

Part No IRF6691TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 32A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 71nC @ 4.5V
Max Input Capacitance 6580pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MT
Dimension DirectFET Isometric MT
Win Source Part Number 111060-IRF6691TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4,800
Ultra Librarian 3D Model Ultra Librarian IRF6691TRPBF CAD Model

Description

The IRF6691TRPBF is an obsolete (EOL) N-channel MOSFET from Infineon Technologies.

  • Maximum Power Dissipation: 2.8W (Ta) and 89W (Tc)
  • Supply and Demand Status: balanced
  • Product is packed in: a reel-TR
  • Mounted through: SMD (SMT)
  • Drive Voltage: 4.5V and 10V
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On at Id,Vgs: 1.8 mOhm @ 15A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,132 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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