The IRF6712S is an N-Channel MOSFET transistor from Infineon.

• Maximum Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 17A (Ta) and 68A (Tc)
• Rds On: 4.9 mOhm @ 17A and 10V
• Gate-Source Threshold Voltage: 2.4V @ 50μA
• Max Gate Charge: 18nC @ 4.5V
• Max Input Capacitance: 1570pF @ 13V
• Package: DIRECTFET SQ package
• Maximum Power Dissipation: 2.2W (Ta) and 36W (Tc)
• Suitable for use in: Discrete Semiconductor Products applications
• Product Status: active
• Popularity: high
• Supply and Demand Status: sufficient