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Same model may have multiple batches, images only for reference.
IRF6721STRPBF
Same model may have multiple batches, images only for reference.

IRF6721STRPBF

Part No IRF6721STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A DIRECTFET
Datasheet
IRF6721STRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1430pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 14A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 069334-IRF6721STRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6721STRPBF CAD Model

Description

The IRF6721STRPBF is a N-channel MOSFET from Infineon Technologies with a drain-source breakdown voltage of 30V and a continuous drain current of 14A @ 25°C.

  • Maximum Rds On at Id,Vgs: 7.3 mOhm @ 14A, 10V
  • Maximum Power Dissipation: 2.2W (Ta), 42W (Tc)
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Package: DirectFET SQ
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: balanced

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