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IRF6722STR1PBF

Part No IRF6722STR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A DIRECTFET / Trans MOSFET N-CH Si 30V 13A 7-Pin Direct-FET ST T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.4V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1320pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.2W (Ta), 42W (Tc)
Rds On (Maximum) @ Id, Vgs 7.3 mOhm @ 13A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package DIRECTFET ST
Package DirectFET Isometric ST
Win Source Part Number 777022-IRF6722STR1PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Family Name IRF6722S
Introduction Date November 12, 2007
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF6722STR1PBF CAD Model

Description

The Infineon Technologies HEXFET IRF6722STR1PBF is a DirectFET Isometric ST packaged MOSFET.

  • Channel Type: N-channel
  • Drain-source voltage: 30V
  • Gate-source threshold voltage: 2.4V @ 50μA
  • Gate-source voltage: ±20V
  • Power Dissipation: 2.2W (Ta), 42W (Tc)
  • Continuous Drain Current: 13A (Ta), 58A (Tc)
  • Rds On: 7.3 mOhm @ 13A, 10V
  • Family: IRF6722S
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced
  • Quantity per package: 1k pcs

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