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IRF6775MTR1PBF

Part No IRF6775MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 4.9A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 4.9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1411pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 56 mOhm @ 5.6A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MZ
Dimension DirectFET Isometric MZ
Win Source Part Number 126451-IRF6775MTR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6775MTR1PBF CAD Model

Description

The MOSFET from Infineon Technologies is a N-Channel power MOSFET designed for various applications.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 4.9A (Ta), 28A (Tc) @ 25°C
  • Maximum Rds On at Id, Vgs: 56 mOhm @ 5.6A, 10V
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 36nC @ 10V
  • Mounted on: SMD (SMT)
  • Packaged in: Reel - TR
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Designed for: discrete semiconductor products
  • Temperature Range: -40°C to 150°C (TJ)
  • Product Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4150 $56.6000
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,580 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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