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Same model may have multiple batches, images only for reference.
IRF6798MTRPBF
Same model may have multiple batches, images only for reference.

IRF6798MTRPBF

Part No IRF6798MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 37A DIRECTFET-MX
Datasheet
IRF6798MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 75nC @ 4.5V
Max Input Capacitance 6560pF @ 13V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 1.3 mOhm @ 37A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 069337-IRF6798MTRPBF
Family Name IRF6798M
Introduction Date December 10, 2009
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6798MTRPBF CAD Model

Description

The IRF6798MTRPBF is a MOSFET transistor from Infineon Technologies that features a Schottky diode (body).

  • Polarity: N-channel
  • Maximum Power Dissipation: 2.8W (Ta), 78W (Tc)
  • Product Status: obsolete (EOL)
  • Supply and demand status: balance
  • Maximum Rds On at Id,Vgs: 1.3 mOhm @ 37A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0765 $59.2075
135+ $0.8836 $119.2860
205+ $0.8559 $175.4595
280+ $0.8281 $231.8680
365+ $0.8004 $292.1460
485+ $0.7173 $347.8905
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Availability: 5,410 pieces
MOQ: 55 pcs
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