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IRF7103Q

Part No IRF7103Q
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Power MOSFET(Vdss=50V) | MOSFET 2N-CH 50V 3A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 3A
Rds On (Maximum) at Id, Vgs 130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 255pF at 25V
Maximum Power 2.4W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187161-IRF7103Q
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7103Q CAD Model

Description

The Infineon Technologies IRF7103Q is an obsolete transistor that features two N-channel MOSFET transistors in a single package.

  • Power Rating: It has a maximum power rating of 2.4W and a drain-source breakdown voltage of 50V.
  • Resistance: The transistor has a low on-state resistance of 130mOhm @ 3A and 10V, making it highly efficient.
  • Package: It is packaged in an 8-SOIC package and is suitable for surface mount applications.
  • Popularity and Balance: The transistor has a medium popularity and a balanced supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0912 $60.0160
130+ $0.8955 $116.4150
200+ $0.8674 $173.4800
280+ $0.8395 $235.0600
360+ $0.8115 $292.1400
480+ $0.7276 $349.2480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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