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Same model may have multiple batches, images only for reference.
IRF7103QTRPBF
Same model may have multiple batches, images only for reference.

IRF7103QTRPBF

Part No IRF7103QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 130 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 255pF @ 25V
Maximum Power Dissipation 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 104491-IRF7103QTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7103QTRPBF CAD Model

Description

The 104491-IRF7103QTRPBF is a dual N-channel standard FET type discrete semiconductor component manufactured by Infineon Technologies.

  • Case or Package: 8-SO
  • Popularity: medium
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 2.4W
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 3A @ 25°C
  • Quantity per package: 1

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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