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Same model may have multiple batches, images only for reference.
IRF7220
Same model may have multiple batches, images only for reference.

IRF7220

Part No IRF7220
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 14V 11A 8-SOIC
Datasheet
IRF7220 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 14V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA
Max Gate Charge 125nC @ 5V
Max Input Capacitance 8075pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 11A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 143340-IRF7220
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Consumer Electronics, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7220 CAD Model

Description

The Infineon Technologies MOSFET is a P-Channel power transistor with a drain-source breakdown voltage of 14V and a continuous drain current of 11A @ 25°C.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Maximum Rds On: 12 mOhm @ 11A, 4.5V
  • Gate-Source Threshold Voltage: 600mV @ 250μA
  • Maximum Gate Charge: 125nC @ 5V
  • Maximum Input Capacitance: 8075pF @ 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Dimensions: 8-SOIC (0.154", 3.90mm Width)
  • Used In: Consumer Electronics and Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
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