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IRF7303QTRPBF

Part No IRF7303QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.9A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.4A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046587-IRF7303QTRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7303QTRPBF CAD Model

Description

The IRF7303QTRPBF is a surface-mount, dual N-channel MOSFET from Infineon Technologies, designed and qualified for automotive applications. This power MOSFET offers a low on-state resistance (Rds(on)) and fast switching speeds, making it suitable for demanding automotive environments.

Applications

  • Automotive motor control
  • Automotive body control modules
  • Automotive lighting systems
  • Automotive power distribution
  • Automotive solenoid drivers

Features

  • AEC-Q101 qualified
  • Dual N-channel MOSFET configuration
  • Low on-state resistance (Rds(on)) for reduced power losses
  • Fast switching speeds
  • Logic-level gate drive
  • Surface mount package
  • RoHS compliant

Benefits

  • Improved energy efficiency in automotive applications
  • Reduced heat dissipation due to low Rds(on)
  • Enhanced system performance with fast switching speeds
  • Simplified gate drive circuitry due to logic-level compatibility
  • Reliable operation in harsh automotive environments
  • Reduced board space requirements due to surface mount package

Additional Details

The IRF7303QTRPBF features a drain-source voltage (Vds) rating suitable for typical automotive power systems. Its low gate charge (Qg) contributes to its fast switching performance. The device is packaged in a small outline integrated circuit (SOIC) package, ideal for space-constrained automotive applications. This MOSFET is designed to withstand the rigorous electrical and thermal stresses encountered in automotive environments, providing a robust and reliable solution for various automotive electronic systems. Its key parameters like Rds(on) and Qg are optimized for efficient power conversion and control. The AEC-Q101 qualification ensures high reliability and long-term performance in automotive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
415+ $0.1398 $58.0170
1,015+ $0.1143 $116.0145
1,565+ $0.1109 $173.5585
2,155+ $0.1074 $231.4470
2,780+ $0.1040 $289.1200
3,705+ $0.0936 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,000 pieces
MOQ: 415 pcs
Order Increment : 1 pcs
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