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IRF7321D2TRPBF

Part No IRF7321D2TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 30V 4.7A 8-Pin SOIC T/R / MOSFET P-CH 30V 4.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 62 mOhm @ 4.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 137122-IRF7321D2TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Family Name IRF7321D2
Introduction Date March 17, 1999
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF7321D2TRPBF CAD Model

Description

The Infineon Technologies IRF7321D2TRPBF is a P-channel MOSFET with a Schottky diode (isolated) feature.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.7A (Ta)
  • Suitable For: Use in applications that require high power dissipation
  • Category: Discrete Semiconductor Products
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Status: Obsolete (EOL)
  • Estimated EOL Date: Not available

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5822 $66.9530
275+ $0.4773 $131.2575
420+ $0.4631 $194.5020
580+ $0.4476 $259.6080
750+ $0.4333 $324.9750
1,000+ $0.3881 $388.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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