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IRF7353D1TRPBF

Part No IRF7353D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017515-IRF7353D1TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7353D1TRPBF CAD Model

Description

The Infineon Technologies 017515-IRF7353D1TRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6.5A @ 25°C.

  • Maximum Rds On: 32 mOhm @ 5.8A and 10V
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Input Capacitance: 650pF @ 25V
  • Technology Used: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Commonly Used: true
  • Supply and Demand Status: balance
  • Quantity Per Package: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3806 $58.9930
370+ $0.3123 $115.5510
575+ $0.3026 $173.9950
790+ $0.2928 $231.3120
1,020+ $0.2831 $288.7620
1,370+ $0.2538 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,130 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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