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Same model may have multiple batches, images only for reference.
IRF7379TRPBF
Same model may have multiple batches, images only for reference.

IRF7379TRPBF

Part No IRF7379TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
IRF7379TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 4.3A
Maximum Rds On at Id,Vgs 45 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017516-IRF7379TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7379TRPBF CAD Model

Description

The Infineon Technologies IRF7379TRPBF is a N and P-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A and 4.3A @ 25°C.

  • Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V
  • Maximum Power Dissipation: 2.5W
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3708 $59.3280
385+ $0.3038 $116.9630
590+ $0.2945 $173.7550
810+ $0.2853 $231.0930
1,050+ $0.2760 $289.8000
1,405+ $0.2472 $347.3160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,080 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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