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Same model may have multiple batches, images only for reference.
IRF7389TRPBF
Same model may have multiple batches, images only for reference.

IRF7389TRPBF

Part No IRF7389TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
IRF7389TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 29 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017518-IRF7389TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7389TRPBF CAD Model

Description

The Infineon Technologies IRF7389TRPBF is a N and P-Channel FET with logic level gate feature.

  • Category: common-used part in the discrete semiconductor product
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: not specified
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 33nC @ 10V
  • Maximum Input Capacitance: 650pF @ 25V
  • Maximum Rds On at Id,Vgs: 29 mOhm @ 5.8A, 10V
  • Popularity: high
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6589 $52.7120
185+ $0.5407 $100.0295
290+ $0.5238 $151.9020
395+ $0.5069 $200.2255
515+ $0.4900 $252.3500
685+ $0.4393 $300.9205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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