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IRF7401PBF

Name: IRF7401PBF
Brand: Infineon Technologies
SKU: 159911
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7401PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 20V 8.7A 8-SOIC
Datasheet	IRF7401PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Not For New Designs
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Gate-Source Threshold Voltage	700mV @ 250μA
Max Gate Charge	48nC @ 4.5V
Max Input Capacitance	1600pF @ 15V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	22 mOhm @ 4.1A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	040694-IRF7401PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7401PBF CAD Model

Description

The Infineon Technologies IRF7401PBF is a N-Channel MOSFET with a maximum power dissipation of 2.5W (Ta).

Category: common-used part in the Discrete Semiconductor Products
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8.7A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 48nC @ 4.5V
Max Input Capacitance: 1600pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 4.1A, 4.5V
Supply and Demand Status: limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
185+	$0.2727	$50.4495
450+	$0.2238	$100.7100
695+	$0.2168	$150.6760
955+	$0.2098	$200.3590
1,235+	$0.2028	$250.4580
1,655+	$0.1818	$300.8790

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,500 pieces

MOQ: 185 pcs

Order Increment : 1 pcs

Qty:

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