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IRF7420PBF

Name: IRF7420PBF
Brand: Infineon Technologies
SKU: 159934
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	IRF7420PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 12V 11.5A 8-SOIC
Datasheet	IRF7420PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	12V
Continuous Drain Current at 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Gate-Source Threshold Voltage	900mV @ 250μA
Max Gate Charge	38nC @ 4.5V
Max Input Capacitance	3529pF @ 10V
Maximum Gate-Source Voltage	±8V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	14 mOhm @ 11.5A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	040697-IRF7420PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7420PBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 040697-IRF7420PBF is a P-channel power MOSFET that has a maximum power dissipation of 2.5W (Ta) and a drain-source breakdown voltage of 12V.

Continuous Drain Current @ 25°C: 11.5A (Tc)
Maximum Rds On @ Id,Vgs: 14 mOhm @ 11.5A, 4.5V
Gate-Source Threshold Voltage: 900mV @ 250μA
Maximum Gate Charge: 38nC @ 4.5V
Maximum Input Capacitance: 3529pF @ 10V
Maximum Gate-Source Voltage: ±8V
Package: 8-SO
Temperature Range: -55°C to 150°C (TJ)
Ideal for: use in discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.3636	$54.5440
90+	$1.1189	$100.7010
140+	$1.0839	$151.7460
195+	$1.0490	$204.5550
250+	$1.0140	$253.5000
330+	$0.9091	$300.0030

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,580 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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