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Same model may have multiple batches, images only for reference.
IRF7420PBF
Same model may have multiple batches, images only for reference.

IRF7420PBF

Part No IRF7420PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 11.5A 8-SOIC
Datasheet
IRF7420PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 3529pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 040697-IRF7420PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7420PBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 040697-IRF7420PBF is a P-channel power MOSFET that has a maximum power dissipation of 2.5W (Ta) and a drain-source breakdown voltage of 12V.

  • Continuous Drain Current @ 25°C: 11.5A (Tc)
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 11.5A, 4.5V
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 38nC @ 4.5V
  • Maximum Input Capacitance: 3529pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Ideal for: use in discrete semiconductor products

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Quantity Unit Price Ext. Price
40+ $1.3636 $54.5440
90+ $1.1189 $100.7010
140+ $1.0839 $151.7460
195+ $1.0490 $204.5550
250+ $1.0140 $253.5000
330+ $0.9091 $300.0030
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Availability: 1,580 pieces
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