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Same model may have multiple batches, images only for reference.
IRF7422D2PBF
Same model may have multiple batches, images only for reference.

IRF7422D2PBF

Part No IRF7422D2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.3A 8-SOIC
Datasheet
IRF7422D2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 610pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 103814-IRF7422D2PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7422D2PBF CAD Model

Description

The Infineon Technologies IRF7422D2PBF is a P-channel MOSFET with a Schottky diode feature.

  • Designed for: use in a variety of applications
  • Maximum Power Dissipation: 2W @ Ta
  • Drive Voltage: 2.7V (maximum Rds On), 4.5V (minimum Rds On)
  • Package: 8-SO
  • Mounting: SMD
  • Breakdown Voltage: 20V
  • Continuous Drain Current: 4.3A @ 25°C
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 22nC @ 4.5V
  • Popularity: high popularity rating
  • Commonly used: in a variety of applications
  • Status: obsolete
  • Supply and Demand Status: limited

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