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Same model may have multiple batches, images only for reference.
IRF7424GTRPBF
Same model may have multiple batches, images only for reference.

IRF7424GTRPBF

Part No IRF7424GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 8-SOIC
Datasheet
IRF7424GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4030pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017532-IRF7424GTRPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7424GTRPBF CAD Model

Description

The Infineon Technologies 017532-IRF7424GTRPBF is a P-channel MOSFET that is commonly used in power management.

  • Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: limited

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130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
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475+ $0.7300 $346.7500
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