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Same model may have multiple batches, images only for reference.
SPW35N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPW35N60C3

Part No SPW35N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 34.6A TO-247
Datasheet
SPW35N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 34.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1.9mA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 313W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 21.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 212047-SPW35N60C3
Family Name SPW35N60C3
Introduction Date May 10, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW35N60C3 CAD Model

Description

The Infineon Technologies SPW35N60C3 is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 34.6A (Tc)
  • Power Dissipation: 313W (Tc)
  • Ideal for: Discrete semiconductor products
  • Package: PG-TO247-3
  • Mounting: Through hole
  • Family Name: SPW35N60C3
  • Dimension: TO-247-3
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced
  • Popularity: High

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