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IRF7425PBF

Part No IRF7425PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 15A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 130nC @ 4.5V
Max Input Capacitance 7980pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 205318-IRF7425PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7425PBF CAD Model

Description

The Infineon Technologies IRF7425PBF is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current Rating: 15A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 130nC @ 4.5V
  • Maximum Input Capacitance: 7980pF @ 15V
  • Maximum Rds On @ Id,Vgs: 8.2 mOhm @ 15A, 4.5V
  • Package: 8-SOIC package
  • Power Dissipation: 2.5W (Ta)
  • Recommendation: It is not recommended for new designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7202 $50.4140
150+ $0.6747 $101.2050
235+ $0.6519 $153.1965
330+ $0.6063 $200.0790
430+ $0.5835 $250.9050
540+ $0.5607 $302.7780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,020 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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