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IRF7456PBF

Part No IRF7456PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 62nC @ 5V
Max Input Capacitance 3640pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001865-IRF7456PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7456PBF CAD Model

Description

The Infineon Technologies IRF7456PBF is a MOSFET with N-Channel polarity and a Drain-Source Breakdown Voltage of 20V.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Application: Power management applications
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds On @ Id,Vgs: 6.5 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 62nC @ 5V
  • Package: 8-SO
  • Maximum Input Capacitance: 3640pF @ 15V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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