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Same model may have multiple batches, images only for reference.
IRF7464
Same model may have multiple batches, images only for reference.

IRF7464

Part No IRF7464
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.2A 8-SOIC
Datasheet
IRF7464 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 730 mOhm @ 720mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001868-IRF7464
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7464 CAD Model

Description

The Infineon Technologies IRF7464 is a N-channel MOSFET transistor that is used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 1.2A (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 730 mOhm @ 720mA, 10V
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 280pF @ 25V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Status: Obsolete(EOL)
  • Popularity: Medium

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