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IRF7464TR Real Image IRF7464TR real image
Same model may have multiple batches, images only for reference.
IRF7464TR Real Image IRF7464TR real image
IRF7464TR Real Image IRF7464TR real image
Same model may have multiple batches, images only for reference.

IRF7464TR

Part No IRF7464TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.2A 8-SOIC
Datasheet
IRF7464TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 730 mOhm @ 720mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046656-IRF7464TR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7464TR CAD Model

Description

The Infineon Technologies 1046656-IRF7464TR is an N-channel MOSFET with a maximum power dissipation of 2.5W (Ta).

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 1.2A (Ta)
  • Maximum Rds On @ Id,Vgs: 730 mOhm @ 720mA, 10V

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