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Same model may have multiple batches, images only for reference.
IRF7467TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7467TRPBF

Part No IRF7467TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
IRF7467TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2530pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046661-IRF7467TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7467TRPBF CAD Model

Description

The Infineon Technologies N-Channel MOSFET is a high-performance electronic component designed for use in industrial and power management systems.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C
  • Power Dissipation (Ta): 2.5W
  • Maximum Rds On: 12 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 32nC @ 4.5V
  • Maximum Input Capacitance: 2530pF @ 15V
  • Package: 8-SO
  • Mounting: Reel

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