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IRF7467TRPBF

Name: IRF7467TRPBF
Brand: Infineon Technologies
SKU: 461836
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7467TRPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 11A 8-SOIC
Datasheet	IRF7467TRPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	32nC @ 4.5V
Max Input Capacitance	2530pF @ 15V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	12 mOhm @ 11A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1046661-IRF7467TRPBF
Popularity	Medium
Supply and Demand Status	Sufficient
Application Field	Used in Industrial, Power Management
Quantity per package	4k pcs
Ultra Librarian 3D Model	Ultra Librarian IRF7467TRPBF CAD Model

Description

The Infineon Technologies N-Channel MOSFET is a high-performance electronic component designed for use in industrial and power management systems.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 11A @ 25°C
Power Dissipation (Ta): 2.5W
Maximum Rds On: 12 mOhm @ 11A, 10V
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Gate Charge: 32nC @ 4.5V
Maximum Input Capacitance: 2530pF @ 15V
Package: 8-SO
Mounting: Reel

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IRF7467TRPBF

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