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IRF7477PBF

Part No IRF7477PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 2710pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046668-IRF7477PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7477PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-Channel power transistor designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Input Capacitance: 2710pF @ 15V
  • Maximum Rds On @ Id,Vgs: 8.5 mOhm @ 14A, 10V
  • Package: 8-SOIC
  • Width: 0.154", 3.90mm
  • Mounting Type: SMD (SMT)
  • Status: Obsolete (EOL)
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.3777 $62.2662
14+ $8.5147 $119.2058
22+ $8.2490 $181.4780
29+ $7.9822 $231.4838
38+ $7.7166 $293.2308
51+ $6.9185 $352.8435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,030 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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