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Same model may have multiple batches, images only for reference.
IRF7478QTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7478QTRPBF

Part No IRF7478QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7A 8-SOIC
Datasheet
IRF7478QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 1740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 4.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046671-IRF7478QTRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7478QTRPBF CAD Model

Description

The IRF7478QTRPBF is a N-Channel MOSFET from Infineon Technologies. Infineon Technologies

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 7A
  • Package: 8-SO
  • Maximum Power Dissipation @ Ta: 2.5W
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 4.2A, 10V
  • Maximum Gate Charge @ 4.5V: 31nC
  • Applications: Power management, motor drive & control, and automotive

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Availability: 5,648 pieces
MOQ: 40 pcs
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