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IRF7488PBF

Name: IRF7488PBF
Brand: Infineon Technologies
SKU: 461848
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7488PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 80V 6.3A 8-SOIC
Datasheet	IRF7488PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	80V
Continuous Drain Current at 25°C	6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	57nC @ 10V
Max Input Capacitance	1680pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	29 mOhm @ 3.8A, 10V
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1046673-IRF7488PBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7488PBF CAD Model

Description

The Infineon Technologies IRF7488PBF MOSFET is a high-performance device that is designed for use in a variety of applications.

Drain-Source Breakdown Voltage: 80V
Continuous Drain Current: 6.3A @ 25°C
Polarity Type: N-channel
Maximum Power Dissipation: 2.5W (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 57nC @ 10V
Maximum Rds On @ Id,Vgs: 29 mOhm @ 3.8A, 10V
Package: 8-SO
Status: obsolete (EOL)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
22+	$2.3227	$51.0994
53+	$1.9059	$101.0127
82+	$1.8463	$151.3966
112+	$1.7867	$200.1104
145+	$1.7272	$250.4440
194+	$1.5485	$300.4090

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,030 pieces

MOQ: 22 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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