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Same model may have multiple batches, images only for reference.
IRF7492PBF
Same model may have multiple batches, images only for reference.

IRF7492PBF

Part No IRF7492PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.7A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 79 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069374-IRF7492PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7492PBF CAD Model

Description

The Infineon Technologies IRF7492PBF is a MOSFET with N-Channel polarity and a Drain-Source Breakdown Voltage of 200V.

  • Application: Power management applications
  • Continuous Drain Current: 3.7A @ 25°C
  • Maximum Rds On at Id,Vgs: 79 mOhm @ 2.2A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 59nC @ 10V
  • Package: 8-SO
  • Maximum Input Capacitance: 1820pF @ 25V
  • Supply and Demand Status: Balanced
  • Units per Package: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6089 $64.3560
90+ $1.3202 $118.8180
140+ $1.2797 $179.1580
190+ $1.2382 $235.2580
245+ $1.1966 $293.1670
325+ $1.0730 $348.7250
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Availability: 105 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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