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Same model may have multiple batches, images only for reference.
IRF7495TR
Same model may have multiple batches, images only for reference.

IRF7495TR

Part No IRF7495TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 7.3A 8-SOIC
Datasheet
IRF7495TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 040699-IRF7495TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7495TR CAD Model

Description

The Infineon Technologies IRF7495TR is an N-channel MOSFET with a drain-source breakdown voltage of 100V.

  • Application: Discrete semiconductor products
  • Package: 8-SO package
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 2.5W @ Ta
  • Maximum Rds On at Id,Vgs: 22 mOhm @ 4.4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Halogen-Free: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9514 $52.3270
130+ $0.7807 $101.4910
200+ $0.7563 $151.2600
275+ $0.7319 $201.2725
355+ $0.7075 $251.1625
475+ $0.6343 $301.2925
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