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Same model may have multiple batches, images only for reference.
IRF7555TR
Same model may have multiple batches, images only for reference.

IRF7555TR

Part No IRF7555TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.3A MICRO8
Datasheet
IRF7555TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.3A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 1066pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001903-IRF7555TR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7555TR CAD Model

Description

The Infineon Technologies IRF7555TR is an obsolete (EOL) product with a medium popularity.

  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.3A
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Mounting: SMD (SMT)
  • Package: Micro8
  • Maximum Rds On at Id,Vgs: 55 mOhm @ 4.3A, 4.5V
  • Application: Discrete semiconductor products

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Quantity Unit Price Ext. Price
115+ $0.5058 $58.1670
280+ $0.4151 $116.2280
435+ $0.4021 $174.9135
595+ $0.3892 $231.5740
770+ $0.3762 $289.6740
1,030+ $0.3373 $347.4190
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