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Same model may have multiple batches, images only for reference.
IRF7603TR
Same model may have multiple batches, images only for reference.

IRF7603TR

Part No IRF7603TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.6A MICRO8
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001906-IRF7603TR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7603TR CAD Model

Description

The Infineon Technologies IRF7603TR is an N-channel MOSFET that is obsolete (EOL).

  • Maximum Power Dissipation: 1.8W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 5.6A (Ta)
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 3.7A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Package: Micro8 package
  • Mounting: SMD (SMT) technology
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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700+ $0.2487 $174.0900
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1,665+ $0.2086 $347.3190
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