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IRF7603TRPBF

Part No IRF7603TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.6A MICRO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001907-IRF7603TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7603TRPBF CAD Model

Description

The Infineon Technologies IRF7603TRPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 5.6A.

  • Package: Micro8 case
  • Power Dissipation: 1.8W
  • Operating Temperature: -55°C to 150°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Input Capacitance: 520pF @ 25V
  • Status: Obsolete (EOL)
  • Mounting: SMD (SMT) technology
  • Application: Discrete semiconductor products
  • Maximum Rds On at Id, Vgs: 35 mOhm @ 3.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
655+ $0.0769 $50.3695
1,585+ $0.0631 $100.0135
2,455+ $0.0611 $150.0005
3,385+ $0.0591 $200.0535
4,375+ $0.0572 $250.2500
5,850+ $0.0513 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 59,583 pieces
MOQ: 655 pcs
Order Increment : 1 pcs
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