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Same model may have multiple batches, images only for reference.
IRF7701TR Real Image
Same model may have multiple batches, images only for reference.

IRF7701TR

Part No IRF7701TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 10A 8-TSSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 5050pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 10A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 001915-IRF7701TR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7701TR CAD Model

Description

The Infineon Technologies IRF7701TR MOSFET is a P-channel field-effect transistor with a maximum power dissipation of 1.5W (Ta).

  • Continuous Drain Current: 10A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 12V
  • Maximum Rds On at Id, Vgs: 11 mOhm @ 10A, 4.5V
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 100nC @ 4.5V
  • Maximum Input Capacitance: 5050pF @ 10V
  • Package: 8-TSSOP
  • Quantity per Package: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,160 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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