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Same model may have multiple batches, images only for reference.
IRF7702 Real Image
Same model may have multiple batches, images only for reference.

IRF7702

Part No IRF7702
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8A 8-TSSOP
Datasheet
IRF7702 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 81nC @ 4.5V
Max Input Capacitance 3470pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046690-IRF7702
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7702 CAD Model

Description

The Infineon Technologies IRF7702 is a P-channel MOSFET that features a drain-source breakdown voltage of 12V and a continuous drain current of 8A at 25°C.

  • Polarity: P-Channel
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 8A @ 25°C
  • Package: 8-TSSOP
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 81nC @ 4.5V
  • Maximum Input Capacitance: 3470pF @ 10V
  • Supply and Demand: Limited

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Quantity Unit Price Ext. Price
160+ $0.3708 $59.3280
385+ $0.3038 $116.9630
590+ $0.2945 $173.7550
810+ $0.2853 $231.0930
1,050+ $0.2760 $289.8000
1,405+ $0.2472 $347.3160
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Availability: 11,200 pieces
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