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Same model may have multiple batches, images only for reference.
IRF7706TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7706TRPBF

Part No IRF7706TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7A 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2211pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.51W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 001918-IRF7706TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7706TRPBF CAD Model

Description

The Infineon Technologies 001918-IRF7706TRPBF is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 7A @ 25°C.

  • Maximum Rds On: 22 mOhm @ 7A and 10V
  • Maximum Gate Charge: 72nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Input Capacitance: 2211pF @ 25V
  • Technology: SMD (SMT)
  • Quantity per Package: 4k pcs

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Quantity Unit Price Ext. Price
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95+ $1.2315 $116.9925
150+ $1.1930 $178.9500
205+ $1.1545 $236.6725
260+ $1.1161 $290.1860
350+ $1.0006 $350.2100
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Availability: 4,900 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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