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Same model may have multiple batches, images only for reference.
IRF7707TR Real Image
Same model may have multiple batches, images only for reference.

IRF7707TR

Part No IRF7707TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7A 8-TSSOP
Datasheet
IRF7707TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 2361pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 001919-IRF7707TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7707TR CAD Model

Description

The Infineon Technologies 001919-IRF7707TR is a MOSFET transistor in a P-channel polarity.

  • Package: reel-TR
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 1.5W (Ta)
  • Drive Voltage: 2.5V (Max Rds On) and 4.5V (Min Rds On)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7A (Ta)
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 47nC @ 4.5V
  • Maximum Input Capacitance: 2361pF @ 15V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds on at Id, Vgs: 22 mOhm @ 7A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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