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Same model may have multiple batches, images only for reference.
IRF7805ZGTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7805ZGTRPBF

Part No IRF7805ZGTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
IRF7805ZGTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2080pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046724-IRF7805ZGTRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian IRF7805ZGTRPBF CAD Model

Description

The Infineon Technologies IRF7805ZGTRPBF is an N-Channel MOSFET that is designed to deliver high performance in power management, computers & computer peripherals.

  • Channel Type: N-Channel
  • Application: Power management, computers & computer peripherals
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Rds On: 6.8 mOhm @ 16A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: SMD (SMT)
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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