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IRF7807VD2TRPBF

Name: IRF7807VD2TRPBF
Brand: Infineon Technologies
SKU: 604667
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRF7807VD2TRPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode \| MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	30V
Id - Continuous Drain Current	8.3A
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Maximum) at Id, Vgs	25mOhm at 7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id	1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	14nC at 4.5V
Gate Source Voltage (Maximum)	±20V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Maximum)	2.5W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	8-SO
Manufacturer Package	8-SOIC
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	1187355-IRF7807VD2TRPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7807VD2TRPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF7807VD2TRPBF is a MOSFET transistor with N-channel polarity.

Drain-Source Breakdown Voltage: It is designed with a drain-source breakdown voltage of 30V
Continuous Drain Current: 8.3A
On-Resistance: The maximum on-resistance is 25mOhm @ 7A and 4.5V gate-source voltage.
Package: This MOSFET transistor is supplied in an 8-SO package
Power Dissipation: 2.5W
Gate-Source Voltage: +/- 20V
Gate Charge: 14nC @ 4.5V.
Application: The IRF7807VD2TRPBF is ideal for use in discrete semiconductor products and has a limited supply and demand status.

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