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IRF7811ATR Real Image
Same model may have multiple batches, images only for reference.

IRF7811ATR

Part No IRF7811ATR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 28V 11.4A 8-SOIC
Datasheet
IRF7811ATR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 1760pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001948-IRF7811ATR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7811ATR CAD Model

Description

The Infineon Technologies IRF7811ATR is a N-Channel MOSFET with 2.5W power dissipation (max) in the discrete semiconductor product category.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Drive Voltage (max Rds On, Min Rds On): 4.5V
  • Drain-Source Breakdown Voltage: 28V
  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 1760pF @ 15V
  • Maximum Rds On @ Id,Vgs: 10 mOhm @ 11A, 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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15+ $8.6241 $129.3615
24+ $8.3546 $200.5104
32+ $8.0851 $258.7232
42+ $7.8156 $328.2552
56+ $7.0071 $392.3976
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