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IRF7821TRPBF Infineon Technologies IRF7821TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRF7821TRPBF Infineon Technologies IRF7821TRPBF Real Image
IRF7821TRPBF Infineon Technologies IRF7821TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7821TRPBF

Part No IRF7821TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.6A 8-SOIC
Datasheet
IRF7821TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 155°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001953-IRF7821TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7821TRPBF CAD Model

Description

The Infineon Technologies IRF7821TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.6A @ 25°C
  • Maximum Rds On @ Id, Vgs: 9.1 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Input Capacitance: 1010pF @ 15V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Suitable for: Discrete Semiconductor Products

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