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IRF7853TRPBF

Part No IRF7853TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 8.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001962-IRF7853TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7853TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel semiconductor device that is designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.3A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4.9V @ 100μA
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Input Capacitance: 1640pF @ 25V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 8.3A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9172 $50.4460
135+ $0.7526 $101.6010
210+ $0.7291 $153.1110
285+ $0.7055 $201.0675
370+ $0.6820 $252.3400
495+ $0.6115 $302.6925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,042 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

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