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Same model may have multiple batches, images only for reference.
IRF7901D1 Real Image
Same model may have multiple batches, images only for reference.

IRF7901D1

Part No IRF7901D1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.2A 8SOIC
Datasheet
IRF7901D1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.2A
Maximum Rds On at Id,Vgs 38 mOhm @ 5A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10.5nC @ 5V
Max Input Capacitance 780pF @ 16V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046741-IRF7901D1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7901D1 CAD Model

Description

The Infineon Technologies IRF7901D1 is a dual N-Channel MOSFET transistor that has a logic level gate feature.

  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.2A @ 25°C
  • Maximum Input Capacitance: 780pF @ 16V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On: 38 mOhm @ 5A, 4.5V
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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