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Same model may have multiple batches, images only for reference.
IRF8707GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8707GTRPBF

Part No IRF8707GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
IRF8707GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 9.3nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11.9 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017550-IRF8707GTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF8707GTRPBF CAD Model

Description

The Infineon Technologies N-Channel MOSFET is a discrete semiconductor product used in power management and industrial applications.

  • Supply and Demand: Sufficient
  • Lifecycle: Not for new designs
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Mounting Technology: SMD (SMT)
  • Package: 8-SO
  • Win Source Part Number: 017550-IRF8707GTRPBF

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,385+ $0.1213 $289.3005
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,700 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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