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IRF9333TRPBF Real Image IRF9333TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRF9333TRPBF Real Image IRF9333TRPBF Real Image
IRF9333TRPBF Real Image IRF9333TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9333TRPBF

Part No IRF9333TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.2A 8-SOIC
Datasheet
IRF9333TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 19.4 mOhm @ 9.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017557-IRF9333TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9333TRPBF CAD Model

Description

The IRF9333TRPBF is a P-channel MOSFET transistor from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Id): 9.2A (Ta) @ 25°C
  • Maximum Rds On at Id, Vgs: 19.4 mOhm @ 9.2A, 10V
  • Max Gate Charge: 38nC @ 10V
  • Mounting: Surface Mount Device (SMD)
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: High

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