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Same model may have multiple batches, images only for reference.
IRF9520NL Real Image
Same model may have multiple batches, images only for reference.

IRF9520NL

Part No IRF9520NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A TO-262
Datasheet
IRF9520NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046776-IRF9520NL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9520NL CAD Model

Description

The Infineon Technologies IRF9520NL is a P-Channel MOSFET transistor.

  • Power Dissipation: 3.8W (Ta) and 48W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.8A (Tc) @ 25°C
  • Mounting: Through Hole
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-262
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
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Availability: 100 pieces
MOQ: 40 pcs
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