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IRF9520NSTRL

Part No IRF9520NSTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046778-IRF9520NSTRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9520NSTRL CAD Model

Description

The Infineon Technologies IRF9520NSTRL is a P-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 6.8A @ 25°C.

  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.8A @ 25°C
  • Maximum Rds On at Id,Vgs: 480 mOhm @ 4A, 10V
  • Power Dissipation: 3.8W (Ta), 48W (Tc)
  • Drive Voltage: 10V
  • Package: D2PAK
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Supply and Demand Status: Balanced

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