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IRF9Z34NSPBF

Part No IRF9Z34NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 19A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046802-IRF9Z34NSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z34NSPBF CAD Model

Description

The Infineon Technologies 1046802-IRF9Z34NSPBF is a P-Channel MOSFET.

  • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 19A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 620pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 10A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Status: not for new designs
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: SMD (SMT)
  • Case/Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8150 $52.9750
150+ $0.6687 $100.3050
235+ $0.6478 $152.2330
320+ $0.6269 $200.6080
415+ $0.6060 $251.4900
555+ $0.5433 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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