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IRFB3407ZPBF Real Image IRFB3407ZPBF Real Image
Same model may have multiple batches, images only for reference.
IRFB3407ZPBF Real Image IRFB3407ZPBF Real Image
IRFB3407ZPBF Real Image IRFB3407ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3407ZPBF

Part No IRFB3407ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 75V 122A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 75V 120A TO-220
Datasheet
IRFB3407ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046811-IRFB3407ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFB3407ZPbF
Introduction Date March 15, 2013
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IRFB3407ZPBF CAD Model

Description

The supply and demand status of this component is limited. This component is a MOSFET with a power dissipation of 230W (Tc) and a drain-source breakdown voltage of 75V.

  • Power Dissipation: 230W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 150μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3482 $53.9280
80+ $1.2613 $100.9040
125+ $1.2178 $152.2250
180+ $1.1308 $203.5440
230+ $1.0873 $250.0790
290+ $1.0438 $302.7020
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