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Same model may have multiple batches, images only for reference.
IRFB4229 Real Image
Same model may have multiple batches, images only for reference.

IRFB4229

Part No IRFB4229
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 46A TO-220AB
Datasheet
IRFB4229 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 26A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205342-IRFB4229
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB4229 CAD Model

Description

The Infineon Technologies IRFB4229 is a N-channel MOSFET transistor with a drain-source breakdown voltage of 250V and a maximum continuous drain current of 46A at 25°C.

  • Drain-Source Breakdown Voltage: 250V
  • Maximum Continuous Drain Current: 46A @ 25°C
  • Maximum Power Dissipation: 330W
  • Maximum Gate Charge: 110nC @ 10V
  • Mounting: Through Hole
  • Package: TO-220AB
  • Rds On Value: 46 mOhm @ 26A and 10V

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177+ $1.9589 $346.7253
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